Typical Characteristics: P-Channel
6
2.75
V GS =- 4.5V
-3.0V
2.5
5
-3.5V
-2.5V
2.25
V GS = -2.0V
4
3
2
1.75
-2.0V
1.5
-2.5V
2
1
-1.8V
1.25
1
-3.0V
-3.5V
-4.5V
0
0
0.5
1
1.5
2
2.5
0.75
0
1
2
3
4
5
6
-V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
-I D , DRAIN CURRENT (A)
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
I D = -2.2A
V GS = -4.5V
0.4
0.35
I D = -1.1 A
1.4
0.3
1.2
0.25
T A = 125 C
1
0.2
o
T A = 25 C
0.15
0.8
0.1
o
0.6
-50
-25
0
25
50
75
100
125
150
0.05
1
2
3
4
5
T J , JUNCTION TEMPERATURE ( C)
o
Figure 13. On-Resistance Variation with
Temperature.
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
T A = -55 C
25 C
5
4
V DS = -5V
o
125 o C
o
10
1
V GS = 0V
T A = 125 o C
25 C
3
0.1
o
-55 C
2
1
0.01
0.001
o
0
0.5
1
1.5 2 2.5
-V GS , GATE TO SOURCE VOLTAGE (V)
3
0.0001
0
0.2 0.4 0.6 0.8 1
-V SD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6420C Rev C(W)
相关PDF资料
FDC642P MOSFET P-CH 20V 4A SSOT-6
FDC645N MOSFET N-CH 30V 5.5A SSOT-6
FDC6506P MOSFET P-CHAN DUAL 30V SSOT6
FDC653N MOSFET N-CH 30V 5A SSOT-6
FDC654P MOSFET P-CH 30V 3.6A SSOT-6
FDC655BN MOSFET N-CH 30V 6.3A SSOT-6
FDC6561AN MOSFET N-CHAN DUAL 30V SSOT6
FDC658AP MOSFET P-CH SGL LL 30V 4A SSOT6
相关代理商/技术参数
FDC6420C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDC6420C_Q 功能描述:MOSFET 20V/-20V N/P RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC642P 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC642P_09 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -20V, -4A, 100m??
FDC642P_F085 功能描述:MOSFET P-CHANNEL 2.5V PowerTrench MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6432SH 功能描述:MOSFET 12V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC645 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET
FDC645N 功能描述:MOSFET SSOT-6 N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube